Molecular beam epitaxy of stoichiometric tin-telluride thin films

被引：5

作者：

Tsuboi, Kaito ^{[1
]}

Su, Nan ^{[1
]}

Kobayashi, Shotaro ^{[1
]}

Sugimoto, Kota ^{[1
]}

Kobayashi, Masakazu ^{[1
,2
]}

机构：

[1] Waseda Univ, Dept Elect Engn & Biosci, Tokyo, Japan

[2] Waseda Univ, Kagami Mem Res Inst Mat Sci & Technol, Tokyo, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 597卷

关键词：

A1; X-ray diffraction; Interfaces; transmission electron microscopy; A3; Molecular beam epitaxy; B1; Tellurides; B2; Topological crystalline insulators; TOPOLOGICAL CRYSTALLINE INSULATOR; 111; SURFACE; GROWTH; SNTE; SNSE;

D O I：

10.1016/j.jcrysgro.2022.126805

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Tin-telluride (SnTe) thin films were grown on (00 1)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 degrees C and 240 degrees C. The crystallinity of the SnTe thin films was studied using X-ray diffraction theta-2 theta measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (1 1 1)-oriented domain was confirmed when the substrate temperature was 240 degrees C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.

引用

页数：6

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