Spectrally resolved electroluminescence microscopy and μ-electroluminescence investigation of GaN-based LEDs

被引：2

作者：

Xia, R

Xu, H

Harrison, I

Beaument, B

Andrianov, A

Dods, SRA

Morgan, JM

Larkins, EC

机构：

[1] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

[2] Univ Nottingham, Dept Phys & Astron, Nottingham NG7 2RD, England

[3] Chrea CNRS, F-06960 Valbonne, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

基金：

中国国家自然科学基金; 英国工程与自然科学研究理事会;

关键词：

characterization; metalorganic chemical vapor deposition; nitrides; semiconducting III-V materials; light emitting diodes;

D O I：

10.1016/S0022-0248(01)01295-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the luminescence properties of GaN LEDs by electroluminescence microscopy (ELM) and micro-electroluminescence (mu -EL) spectroscopy. Spatial inhomogeneity in the deep level region of the spectra is observed in spectrally resolved ELM images. Room temperature mu -EL spectra measured from 5 x 5 mum(2) regions show anticorrelation of the defect-related recombination (E = 1.95-2.45 eV) with the band-edge emission (E = 3.18 eV). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：467 / 472

页数：6

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