The antiguiding parameter in mid-infrared optically pumped semiconductor lasers

被引：0

作者：

Ongstad, A. P. ^{[1
]}

Dente, G. C. ^{[1
]}

Tilton, M. L. ^{[1
]}

Kaspi, R. ^{[1
]}

Chavez, J. R. ^{[1
]}

机构：

[1] USAF, Res Lab, RDLA, Kirtland AFB, NM 87117 USA

来源：

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年

关键词：

GAIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe measurements of the antiguiding parameter, alpha, for several optically pumped semiconductor lasers. The two W lasers, incorporated 14 type-II quantum wells (QWs) and operated at wavelengths of similar to 3.5 and similar to 4.5 mu m. The lasers displayed low antiguiding factors of similar to 1.0. We attribute the low alpha's for the W lasers to the higher QW gain as well as to inhomogeneous broadening induced by the 14 QWs. The differing well widths and the independent optical pumping of the wells, leads to a net gain spectrum that is symmetrical about the gain peak. This symmetry, in turn, leads to small differential index shifts at the gain peak; the result of the small differential index and large differential gain is low antiguiding.

引用

页数：2

共 3 条

[1] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].