Diffusion of copper in titanium zirconium nitride thin films

被引：26

作者：

Kuo, YL ^{[1
]}

Lee, HH

Lee, C

Lin, JC

Shue, SL

Liang, MS

Daniels, BJ

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 10672, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Res & Dev, Hsinchu 300, Taiwan

[3] Honeywell Elect Mat Star Ctr, Sunnyvale, CA USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 03期

关键词：

D O I：

10.1149/1.1644355

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The diffusion coefficient of Cu in (Ti, Zr)N was measured by X-ray diffraction (XRD) and four-point probe (FPP) analyses after annealing Cu/(Ti, Zr) N/Si multilayered samples in the temperature range of 500- 900 degreesC. Cu diffusion in (Ti, Zr)N had components from both the grain boundaries and the lattice based on diffusional analysis. This study suggests that for the measurement of the diffusion coefficient of Cu, FPP analysis is more precise and sensitive than XRD analysis. Additionally, (Ti, Zr)N has better Cu diffusion barrier properties than those of TaN and TiN. (C) 2004 The Electrochemical Society.

引用

页码：C35 / C37

页数：3

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