Spin pump induced inverse spin Hall effect observed in Bi-doped n-type Si

被引：7

作者：

Ezhevskii, A. A. ^{[1
]}

Guseinov, D. V. ^{[1
]}

Soukhorukov, A. V. ^{[1
]}

Novikov, A. V. ^{[2
]}

Yurasov, D. V. ^{[2
]}

Gusev, N. S. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, 23 Pr Gagarina Gagarin Ave, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, GSP-105, Afonino 603950, Nizhny Novgorod, Russia

来源：

PHYSICAL REVIEW B | 2020年 / 101卷 / 19期

基金：

俄罗斯科学基金会;

关键词：

EXCITATION; SILICON;

D O I：

10.1103/PhysRevB.101.195202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An inverse spin Hall effect (ISHE) in n-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization precession during ferromagnetic resonance in a thin Permalloy (Py) layer deposited on a Si layer doped by phosphor and bismuth. From the angular dependences of the dc voltage for different Py/n-Si:Bi structures aligned along the [011] or [100] crystal axes, we were able to distinguish the planar Hall effect (PHE) and ISHE contributions. The ISHE dc voltage signal was proportional to the sin theta sin 2 theta product for the structure aligned to the [011] crystal axis and to sin theta cos 2 theta for the [100] direction. In addition, the PHE dc voltage was observed for the angles corresponding to the sin 2 theta dependence. This means that for silicon as a many-valley semiconductor, the scattering of spins due to the spin-orbit potential induced by shallow donor in n-type material is dependent on the orientation of the valley axes relative to the direction of the magnetic field.

引用

页数：7

共 33 条

[1] Inverse spin-Hall effect induced by spin pumping in metallic system [J].

Ando, K. ;

Takahashi, S. ;

Ieda, J. ;

Kajiwara, Y. ;

Nakayama, H. ;

Yoshino, T. ;

Harii, K. ;

Fujikawa, Y. ;

Matsuo, M. ;

Maekawa, S. ;

Saitoh, E. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (10)

[2] Measurement of spin current using spin relaxation modulation induced by spin injection [J].

Ando, K. ;

Nakayama, H. ;

Kajiwara, Y. ;

Kikuchi, D. ;

Sasage, K. ;

Uchida, K. ;

Ikeda, K. ;

Saitoh, E. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)

[3] Angular dependence of inverse spin-Hall effect induced by spin pumping investigated in a Ni81Fe19/Pt thin film [J].

Ando, K. ;

Kajiwara, Y. ;

Takahashi, S. ;

Maekawa, S. ;

Takemoto, K. ;

Takatsu, M. ;

Saitoh, E. .

PHYSICAL REVIEW B, 2008, 78 (01)

[4] Electric manipulation of spin relaxation using the spin Hall effect [J].

Ando, K. ;

Takahashi, S. ;

Harii, K. ;

Sasage, K. ;

Ieda, J. ;

Maekawa, S. ;

Saitoh, E. .

PHYSICAL REVIEW LETTERS, 2008, 101 (03)

[5] Observation of the inverse spin Hall effect in silicon [J].

Ando, Kazuya ;

Saitoh, Eiji .

NATURE COMMUNICATIONS, 2012, 3

[6] Investigation of the inverted Hanle effect in highly doped Si [J].

Aoki, Yasunori ;

Kameno, Makoto ;

Ando, Yuichiro ;

Shikoh, Eiji ;

Suzuki, Yoshishige ;

Shinjo, Teruya ;

Shiraishi, Masashi ;

Sasaki, Tomoyuki ;

Oikawa, Tohru ;

Suzuki, Toshio .

PHYSICAL REVIEW B, 2012, 86 (08)

[7] Electronic measurement and control of spin transport in silicon [J].

Appelbaum, Ian ;

Huang, Biqin ;

Monsma, Douwe J. .

NATURE, 2007, 447 (7142) :295-298

[8] Spin battery operated by ferromagnetic resonance [J].

Brataas, A ;

Tserkovnyak, Y ;

Bauer, GEW ;

Halperin, BI .

PHYSICAL REVIEW B, 2002, 66 (06) :604041-604044

[9] Electrical creation of spin polarization in silicon at room temperature [J].

Dash, Saroj P. ;

Sharma, Sandeep ;

Patel, Ram S. ;

de Jong, Michel P. ;

Jansen, Ron .

NATURE, 2009, 462 (7272) :491-494

[10] Spin-based logic in semiconductors for reconfigurable large-scale circuits [J].

Dery, H. ;

Dalal, P. ;

Cywinski, L. ;

Sham, L. J. .

NATURE, 2007, 447 (7144) :573-576

← 1 2 3 4 →