Fully integrated GaAsHBT MMIC power amplifier modules for 2.5/3.5-GHz-Band WiMAX applications

被引:0
作者
Miyashita, M. [1 ]
Okuda, T. [1 ]
Kurusu, H. [1 ]
Shimamura, S. [2 ]
Konishi, S. [2 ]
Udomoto, J. [1 ]
Matsushita, R. [3 ]
Sasaki, Y. [1 ]
Suzuki, S. [1 ]
Miura, T. [1 ]
Komaru, M. [1 ]
Yamamoto, K. [1 ]
机构
[1] Mitsubishi Electr Corp, High Frequency Opt Device Works, 4-1 Mizuhara, Itami, Hyogo 6648641, Japan
[2] Wave Technol Inc, Quezon City, Philippines
[3] Miyoshi Elect Corp, Kawanishi, Japan
来源
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST | 2007年
关键词
MMIC; power amplifiers (PAs); attenuator; detector; heterojunction bipolar transistors (HBTs); WiMAX;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. Each amplifier module integrates a fully 50-Omega input/output matched three-stage amplifier, a 0/20-dB step attenuator, an attenuator controller, and an RF detector together with all bias circuits, featuring on-module full integration. The step attenuator operating with high power handling capability, low-distortion, and low-bias current is placed between the first and second stages, thereby suppressing the change of the input return loss between thru and attenuation modes. With the 4.5 mm x 4.5 mm small-size module, optimized circuit design approaches lead to the following good measurement results under the 6-V supply voltage and WiMAX modulation (64QAM) test condition. The 2.5-GHz-band PA is capable of delivering a high gain (G(p)) of over 31.9 dB, EVM of less than 2.1%, and PAE of more than 13.4% at a 28-dBm high output power (P-out). For the 3.5-GHz-band PA, a high G(p) of over 28.1 dB, EVM of less than 2.4%, and PAE of over 11% are achieved at a P-out of 28 dBm.
引用
收藏
页码:219 / +
页数:2
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