Modification of Metallic Multiwalled Carbon Nanotubes Properties by 50 Hz Atmospheric Pressure Dielectric Barrier Discharge Plasma

被引:0
作者
Sahari, Norain [1 ,2 ]
Buntat, Zolkafle [1 ]
Azman, Zulkifli [1 ]
Nawawi, Zainuddin [3 ]
Sidik, Muhammad Abu Bakar [3 ]
Jambak, Muhammad Han [3 ]
机构
[1] Univ Teknol Malaysia, Fac Elect Engn, Inst High Voltage & High Current, Skudai 81310, Johor, Malaysia
[2] Univ Tun Hussein Onn, Fac Elect & Elect, Dept Power, Parit Raja 86400, Johor, Malaysia
[3] Univ Sriwijaya, Fac Engn, Dept Elect Engn, South Sumatera 30128, Indonesia
关键词
DBD Plasma; Electronic Properties; Modified MWCNT; ELECTRONIC-PROPERTIES; GAS SENSOR; FUNCTIONALIZATION; NITROGEN; FLUORINATION; NONCOVALENT; DISPERSION; SEPARATION; OXYGEN; DIODE;
D O I
10.1166/jno.2019.2450
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, multiwalled carbon nanotubes (MWCNTs) were modified using low frequency (50 Hz) non-equilibrium plasma, which was generated separately by oxygen and nitrogen dielectric barrier discharge plasma (DBD) at atmospheric pressure. The MWCNTs were treated with oxygen and nitrogen DBD plasma at atmospheric pressure under three different applied voltages, because the MWCNTs surface was closely related to the plasma treatment voltage. The surface and electrical properties of pristine and treated MWCNTs were studied using Transmission Electron Microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectroscopy, while the electrical characteristics were measured using a Hall measurement and two-point probe. FTIR showed formation of oxygen-containing groups like C=O and COOH for the O-2 DBD plasma, and addition of N-H vibration bending for the N-2 DBD plasma. Raman spectroscopy revealed that the ratio of I-D/I-G increased with increasing discharge voltage of plasma. The ascended I-D/I-G may be ascribed to the production of several new defects owing to the introduction of oxygen- and nitrogen functional groups recognized by FTIR. The results of Hall measurement showed that the hall mobility increased with the increase of O-2 and N-2 DBD voltage. Highest hall mobility was measured for MWCNTs treated with nitrogen at 12 kV, which was 172.9 cm(2)/Vs. It was also found from the two-point probe IV curve that Ohmic behaviour of pristine MWCNTs tended to change to Schottky behaviour after DBD plasma treatment.
引用
收藏
页码:118 / 127
页数:10
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