In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization

被引：6

作者：

Jung, Mina ^{[1
]}

Okada, Atsushi ^{[2
]}

Saito, Takanobu ^{[2
]}

Suemasu, Takashi ^{[2
]}

Chung, Chan-Yeup ^{[1
]}

Kawazoe, Yoshiyuki ^{[1
]}

Usami, Noritaka ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 04期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

AMORPHOUS-SILICON; ZNO; TEMPERATURE;

D O I：

10.1143/JJAP.50.04DP02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the impact of Al-doped ZnO (AZO) layer of polycrystalline silicon (poly-Si) thin films grown at different annealing temperatures using aluminum-induced crystallization (AIC). In situ observation revealed that the increase of crystallized fraction was fast in poly-Si films grown with AZO layer compared to those without AZO. It is explained that the roughness of interface between Si and Al by introducing AZO layer was increased, which contributes to enhancement of diffused Si concentration into Al layer. Those results were also quantitatively demonstrated by calculating of Si concentration diffused into the Al layer. Therefore, we exhibit that controlling interface roughness is shown to be important to determine the growth rate of poly-Si thin films. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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