Mode assignment of excited states in self-assembled InAs/GaAs quantum dots

被引：64

作者：

Noda, S ^{[1
]}

Abe, T ^{[1
]}

Tamura, M ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.58.7181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The modes of excited states of electrons and holes in self-assembled InAs/GaAs quantum dots (QD's) are investigated through photoluminescence (PL) and photoluminescence excitation (PLE) polarization properties with the aid of the theoretical calculation. First, the wave functions of electrons and holes are calculated by solving the three-dimensional Schrodinger equation using the finite element method by considering the effect of the strain distributions inside and/or around QD's. It is shown that there exist excited states of not only holes but also electrons in [1(1) over bar 0] and [110] directions. Based on the results, the polarization properties of transitions between excited states of electrons and holes with the same quantum numbers are calculated. Then, the PL and PLE polarization properties are measured, and the modes of the excited states are assigned by comparing the calculation results.

引用

页码：7181 / 7187

页数：7

共 15 条

[1] Absorption spectra and optical transitions in InAs/GaAs self-assembled quantum dots [J].

Cusack, MA ;

Briddon, PR ;

Jaros, M .

PHYSICAL REVIEW B, 1997, 56 (07) :4047-4050

[2] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].

GRUNDMANN, M ;

STIER, O ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981

[3]

Grundmann M, 1996, APPL PHYS LETT, V68, P979, DOI 10.1063/1.116118

[4] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[5] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[6] THRESHOLD CURRENT-DENSITY OF GAINASP-INP QUANTUM-BOX LASERS [J].

MIYAMOTO, Y ;

MIYAKE, Y ;

ASADA, M ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (09) :2001-2006

[7] INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS [J].

NABETANI, Y ;

ISHIKAWA, T ;

NODA, S ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :347-351

[8]

NODA S, 1997, IN PRESS PHYSICA E

[9] MBE AND MOCVD GROWTH AND PROPERTIES OF SELF-ASSEMBLING QUANTUM-DOT ARRAYS IN III-V SEMICONDUCTOR STRUCTURES [J].

PETROFF, PM ;

DENBAARS, SP .

SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (01) :15-21

[10]

POLLAK FH, 1991, SEMICONDUCTORS SEMIM, V33, pCH2

← 1 2 →