Preparation of p-SnO/n-ZnO Heterojunction Nanowire Arrays and Their Optoelectronic Characteristics under UV Illumination

被引：36

作者：

Tsai, Fu-Shou ^{[2
]}

Wang, Shui-Jinn ^{[1
]}

Tu, Yung-Chun ^{[2
]}

Hsu, Yu-Wei ^{[2
]}

Kuo, Chao-Yin ^{[2
]}

Lin, Zeng-Sing ^{[2
]}

Ko, Rong-Ming ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

EMISSION; GROWTH;

D O I：

10.1143/APEX.4.025002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the use of a ZnO-nanowire (NW)-based heterojunction array structure for application to UV sensors is proposed. Nano-heterojunction arrays (NHAs) were formed via the oblique-angle sputtering deposition of p-type tin monoxide onto vertically aligned ZnO-NWs grown by hydrothermal growth (HTG). The current density-voltage (J-V) curve in darkness shows that the prepared SnO/ZnO-NW NHAs have rectifying current-voltage characteristics. They also exhibit a superior response to UV (254 nm) light illumination. The optoelectronic properties of the SnO/ ZnO-NW NHAs with different SnO thicknesses (50-1000 nm) under different UV light intensities (2-6 mW/cm(2)) were investigated and discussed. UV sensitivity (I-UV/I-dark) as high as 8.5 was obtained. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

共 15 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] Electro-optical properties of all-oxide p-CuAlO2/n-ZnO:: Al transparent heterojunction thin film diode fabricated on glass substrate [J].

Banerjee, Arghya N. ;

Chattopadhyay, Kalyan K. .

CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2008, 6 (01) :57-63

[3] Electrical and CO gas sensing properties of layered ZnO-CuO sensor [J].

Choi, JD ;

Choi, GM .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 69 (1-2) :120-126

[4] X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset [J].

Deng, R. ;

Yao, B. ;

Li, Y. F. ;

Zhao, Y. M. ;

Li, B. H. ;

Shan, C. X. ;

Zhang, Z. Z. ;

Zhao, D. X. ;

Zhang, J. Y. ;

Shen, D. Z. ;

Fan, X. W. .

APPLIED PHYSICS LETTERS, 2009, 94 (02)

[5] Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing [J].

Fortunato, Elvira ;

Barros, Raquel ;

Barquinha, Pedro ;

Figueiredo, Vitor ;

Park, Sang-Hee Ko ;

Hwang, Chi-Sun ;

Martins, Rodrigo .

APPLIED PHYSICS LETTERS, 2010, 97 (05)

[6] Microstructure, optical, and electrical properties of p-type SnO thin films [J].

Guo, W. ;

Fu, L. ;

Zhang, Y. ;

Zhang, K. ;

Liang, L. Y. ;

Liu, Z. M. ;

Cao, H. T. ;

Pan, X. Q. .

APPLIED PHYSICS LETTERS, 2010, 96 (04)

[7] ZnO nanowire growth and devices [J].

Heo, YW ;

Norton, DP ;

Tien, LC ;

Kwon, Y ;

Kang, BS ;

Ren, F ;

Pearton, SJ ;

LaRoche, JR .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2004, 47 (1-2) :1-47

[8] Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process [J].

Li, SY ;

Lin, P ;

Lee, CY ;

Tseng, TY .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3711-3716

[9] High-performance UV detector made of ultra-long ZnO bridging nanowires [J].

Li, Yanbo ;

Della Valle, Florent ;

Simonnet, Mathieu ;

Yamada, Ichiro ;

Delaunay, Jean-Jacques .

NANOTECHNOLOGY, 2009, 20 (04)

[10] Giant enhancement of band edge emission in ZnO and SnO nanocomposites [J].

Lin, Jian Ming ;

Cheng, Chung Liang ;

Lin, Hsia Yu ;

Chen, Yang Fang .

OPTICS LETTERS, 2006, 31 (21) :3173-3175

← 1 2 →