Analysis of Super-Steep Subthreshold Slope Body-Tied SOI MOSFET and its Possibility for Ultralow Voltage Application

In this paper, we review a super-steep subthreshold slope (SS) (< 1 mV/dec) body-tied (BT) silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) fabricated with 0.15 mu m SOI technology and discuss the possibility of its use in ultralow voltage applications. The mechanism of the super-steep SS in the BT SOI MOSFET was investigated with technology computer-aided design simulation. The gate length/width and Si thickness optimizations promise further reductions in operation voltage, as well as improvement of the ION/IOFF ratio. In addition, we demonstrated control of the threshold voltage and hysteresis characteristics using the substrate and body bias in the BT SOI MOSFET.