Variation in the Optical Properties of the SiC-SiO2 Composite Antireflection Layer in Crystalline Silicon Solar Cells by Annealing

被引：4

作者：

Jannat, Azmira ^{[1
]}

Li, Zhen Yu ^{[1
]}

Akhter, M. Shaheer ^{[1
,2
]}

Yang, O-Bong ^{[1
,2
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Solar Energy Res Ctr, Jeonju 54896, Jeonbuk, South Korea

[2] Chonbuk Natl Univ, New & Renewable Energy Mat Dev Ctr NewREC, Jeonju, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 11期

关键词：

Antireflection materials; composite; optical properties; electrical properties; solar cells; annealing; PULSED-LASER DEPOSITION; THIN-FILMS; COATINGS; NANOCOMPOSITE; PERFORMANCE;

D O I：

10.1007/s11664-017-5639-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study showed the effects of annealing on a sol-gel-derived SiC-SiO2 composite antireflection (AR) layer and investigated the optical and photovoltaic properties of crystalline silicon (Si) solar cells. The SiC-SiO2 composite AR coating showed a considerable decrease in reflectance from 7.18% to 3.23% at varying annealing temperatures of 450-800 degrees C. The refractive indices of the SiC-SiO2 composite AR layer were tuned from 2.06 to 2.45 with the increase in annealing temperature. The analysis of the current density-voltage characteristics indicated that the energy conversion efficiencies of the fabricated Si solar cells gradually increased from 16.99% to 17.73% with increasing annealing temperatures of 450-800 degrees C. The annealing of the SiC-SiO2 composite AR layer in Si solar cells was crucial to improving the optical, morphological, and photovoltaic properties.

引用

页码：6357 / 6366

页数：10

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