Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs

被引：23

作者：

Cai, Yumeng ^{[1
]}

Xu, Hao ^{[1
]}

Sun, Peng ^{[1
]}

Ke, Junji ^{[2
]}

Deng, Erping ^{[1
]}

Zhao, Zhibin ^{[1
]}

Li, Xuebao ^{[1
]}

Chen, Zhong ^{[3
]}

机构：

[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China

[2] Shanghai Belling Co Ltd, Shanghai 200233, Peoples R China

[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 10期

关键词：

Gate structure; interface state density; OFF-state starting voltages; silicon carbide (SiC) MOSFETs; switching characteristics; threshold voltage (V-TH) hysteresis; INSTABILITY; PREDICTION; DEPENDENCE;

D O I：

10.1109/TED.2021.3101459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold voltage (V-TH) hysteresis affects the reliability of silicon carbide (SiC) MOSFETs. To evaluate the V-TH hysteresis effect on switching characteristics, this article first investigates the V-TH hysteresis in the static characteristics of three SiC MOSFETs with different gate structures. The results illustrate the density of the interface states in different gate structures. Then, the effect of V-TH hysteresis on dynamic characteristics under varying OFF-state starting voltages (V-G(OFF)) is evaluated by experiment. Furthermore, the effect mechanism of V-TH hysteresis and V-G(OFF) on switching characteristics is analyzed. Under the effect of the V-TH hysteresis, a smaller V-G(OFF) reduces V-TH when the device turns on. This phenomenon leads to a reduction in the turn-on delay and consequently lowers the turn-on loss. Therefore, the V-TH hysteresis is a significant factor for gate driver design of SiC MOSFETs.

引用

页码：5014 / 5021

页数：8

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