Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

被引：24

作者：

Jeong, Yeon Taek ^{[1
]}

Dodabalapur, Ananth ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

关键词：

D O I：

10.1063/1.2806914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pentacene-based low voltage organic field-effect transistors were realized using an anodized Ta2O5 gate dielectric. The Ta2O5 gate dielectric layer with a surface roughness of 1.3 A was obtained by anodizing an e-beam evaporated Ta film. The device exhibited values of saturation mobility, threshold voltage, and I-on/I-off ratio of 0.45 cm(2)/V s, 0.56 V, and 7.5x10(1), respectively. The gate leakage current was reduced by more than 70% with a hexamethyldisilazane (HMDS) treatment on the Ta2O5 layer. The HMDS treatment also resulted in enhanced mobility values and a larger pentacene grain size.

引用

页数：3

共 21 条

[1] Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors
Bartic, C
Jansen, H
Campitelli, A
Borghs, S
[J]. ORGANIC ELECTRONICS, 2002, 3 (02) : 65 - 72
[2] Pentacene-based radio-frequency identification circuitry
Baude, PF
Ender, DA
Haase, MA
Kelley, TW
Muyres, DV
Theiss, SD
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3964 - 3966
[3] Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films
Collet, J
Tharaud, O
Chapoton, A
Vuillaume, D
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (14) : 1941 - 1943
[4] Design and fabrication of organic complementary circuits
Crone, BK
Dodabalapur, A
Sarpeshkar, R
Filas, RW
Lin, YY
Bao, Z
O'Neill, JH
Li, W
Katz, HE
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) : 5125 - 5132
[5] High-capacitance organic nanodielectrics: Effective medium models of their response
DiBenedetto, Sara A.
Paci, Irina
Facchetti, Antonio
Marks, Tobin J.
Ratner, Mark A.
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (45) : 22394 - 22399
[6] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[7] 2-9
[8] Flexible active-matrix displays and shift registers based on solution-processed organic transistors
Gelinck, GH
Huitema, HEA
Van Veenendaal, E
Cantatore, E
Schrijnemakers, L
Van der Putten, JBPH
Geuns, TCT
Beenhakkers, M
Giesbers, JB
Huisman, BH
Meijer, EJ
Benito, EM
Touwslager, FJ
Marsman, AW
Van Rens, BJE
De Leeuw, DM
[J]. NATURE MATERIALS, 2004, 3 (02) : 106 - 110
[9] HORI T, 1997, SPRIN S ELE, V34, P1
[10] Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric
Kim, Kang Dae
Song, Chung Kun
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (23)

← 1 2 3 →