Tuning the hysteresis voltage in 2D multilayer MoS2 FETs

被引：30
作者：
Jiang, Jie [1 ]
Zheng, Zhouming [1 ]
Guo, Junjie [1 ]
机构：
[1] Cent S Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2016年 / 498卷
基金：
中国国家自然科学基金;
关键词：
MoS2; Two-dimensional materials; Hysteresis voltage; Traps; Field-effect transistors; LAYER MOS2; ZIGZAG GRAPHENE; MONOLAYER MOS2; TRANSISTORS; HETEROJUNCTION;
D O I：
10.1016/j.physb.2016.06.025
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS2 transistors. It was found that high temperature (175 degrees C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS2 FET. This simple method for tuning the hysteresis voltage of MoS2 FET can make a significant step toward 2D nanoelectronic device applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：76 / 81
页数：6
相关论文
共 27 条
[1]   Giant magnetoresistance and spin-filtering effects in zigzag graphene and hexagonal boron nitride based heterojunction [J].
Cao, Can ;
Long, Meng-qiu ;
Zhang, Xiao-jiao ;
Mao, Xian-cheng .
PHYSICS LETTERS A, 2015, 379 (24-25) :1527-1531
[2]   Electronic transport properties on transition-metal terminated zigzag graphene nanoribbons [J].
Cao, Can ;
Chen, Ling-Na ;
Long, Meng-Qiu ;
Huang, Wei-Rong ;
Xu, Hui .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (11)
[3]   High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems [J].
Chang, Hsiao-Yu ;
Yang, Shixuan ;
Lee, Jongho ;
Tao, Li ;
Hwang, Wan-Sik ;
Jena, Debdeep ;
Lu, Nanshu ;
Akinwande, Deji .
ACS NANO, 2013, 7 (06) :5446-5452
[4]   Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator [J].
Cho, Ah-Jin ;
Yang, Suk ;
Park, Kyung ;
Namgung, Seok Daniel ;
Kim, Hojoong ;
Kwon, Jang-Yeon .
ECS SOLID STATE LETTERS, 2014, 3 (10) :Q67-Q69
[5]   Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors [J].
Cho, Kyungjune ;
Park, Woanseo ;
Park, Juhun ;
Jeong, Hyunhak ;
Jang, Jingon ;
Kim, Tae-Young ;
Hong, Woong-Ki ;
Hong, Seunghun ;
Lee, Takhee .
ACS NANO, 2013, 7 (09) :7751-7758
[6]   Spin-dependent transport properties of hetero-junction based on zigzag graphene nanoribbons with edge hydrogenation and oxidation [J].
Cui, Li-ling ;
Long, Meng-qiu ;
Zhang, Xiao-jiao ;
Li, Xin-mei ;
Zhang, Dan ;
Yang, Bing-chu .
PHYSICS LETTERS A, 2016, 380 (5-6) :730-738
[7]   Moisture induced electron traps and hysteresis in pentacene-based organic thin-film transistors [J].
Gu, Gong ;
Kane, Michael G. .
APPLIED PHYSICS LETTERS, 2008, 92 (05)
[8]   Electronic structures and magnetic properties in Cu-doped two-dimensional dichalcogenides [J].
Hu, Ai-Ming ;
Wang, Ling-ling ;
Xiao, Wen-Zhi ;
Meng, Bo .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2015, 73 :69-75
[9]   Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides [J].
Jariwala, Deep ;
Sangwan, Vinod K. ;
Lauhon, Lincoln J. ;
Marks, Tobin J. ;
Hersam, Mark C. .
ACS NANO, 2014, 8 (02) :1102-1120
[10]   Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].
Jeong, Jae Kyeong ;
Yang, Hui Won ;
Jeong, Jong Han ;
Mo, Yeon-Gon ;
Kim, Hye Dong .
APPLIED PHYSICS LETTERS, 2008, 93 (12)
123