Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate

被引：0

作者：

Lin, Tao ^{[1
]}

Lin, Nan ^{[1
]}

Li, Lian-bi ^{[1
]}

Yang, Chen ^{[1
]}

Pu, Hong-bin ^{[1
]}

Chen, Zhi-ming ^{[1
]}

机构：

[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Shaanxi, Peoples R China

来源：

OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷

关键词：

SiC; SiCGe; Photoluminescence; SILICON-CARBIDE; GERMANIUM;

D O I：

10.4028/www.scientific.net/MSF.663-665.445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By means of SEM, TEM, UV-VIS optical transmission spectra and photoluminescence spectra tests, hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate were studied. SEM and TEM images have shown that the SiCGe were grown in layer-by-layer mode with APD and DPB defects which were caused by the thermal and lattice mismatches between SiCGe and SiC. Transmission spectra results have shown the calculated band gap of the SiCGe layer was 2.31eV. Room temperature photoluminescence spectra have shown that the peak wavelength and the FWHM of SiCGe layer were closely related to its Ge contents and the hetero-epitaxial defects.

引用

页码：445 / 448

页数：4

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