Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

被引:29
|
作者
Hamp, MJ [1 ]
Cassidy, DT
Robinson, BJ
Zhao, QC
Thompson, DA
Davies, M
机构
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
charge carrier processes; quantum-well lasers; semiconductor lasers;
D O I
10.1109/68.720267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side, The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers.
引用
收藏
页码:1380 / 1382
页数:3
相关论文
共 50 条
  • [41] CARRIER DISTRIBUTION IN QUANTUM-WELL LASERS
    EVANS, PA
    BLOOD, P
    ROBERTS, JS
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1740 - 1743
  • [42] Threshold characteristics of InGaAsP/InP multiple quantum well lasers
    Asryan, LV
    Gun'ko, NA
    Polkovnikov, AS
    Zegrya, GG
    Suris, RA
    Lau, PK
    Makino, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (12) : 1131 - 1140
  • [43] Carrier lifetime in compressively strained InGaAs quantum well lasers with InGaAsP barrier/waveguide layers grown on GaAs
    Susaki, W
    Ukawa, S
    Tanaka, M
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3, 2006, 3 (03): : 683 - +
  • [44] THE EXTRA DIFFERENTIAL GAIN ENHANCEMENT IN MULTIPLE-QUANTUM-WELL LASERS
    ZHAO, B
    CHEN, TR
    YARIV, A
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (02) : 124 - 126
  • [45] ON NONUNIFORM PUMPING FOR MULTIPLE-QUANTUM-WELL SEMICONDUCTOR-LASERS
    LIN, CH
    CHUA, CL
    ZHU, ZH
    LO, YH
    APPLIED PHYSICS LETTERS, 1994, 65 (19) : 2383 - 2385
  • [46] MONOLITHIC STRAINED-INGAASP MULTIPLE-QUANTUM-WELL LASERS WITH INTEGRATED ELECTROABSORPTION MODULATORS FOR ACTIVE-MODE LOCKING
    SATO, K
    WAKITA, K
    KOTAKA, I
    KONDO, Y
    YAMAMOTO, M
    TAKADA, A
    APPLIED PHYSICS LETTERS, 1994, 65 (01) : 1 - 3
  • [47] Dynamics of barrier state electron self-localization in InGaAs/InGaAsP multiple quantum well lasers
    Finzi, D
    Tessler, N
    Mikhaelashvili, V
    Eisenstein, G
    Dentai, AG
    Chandraskhar, S
    Joyner, CH
    APPLIED PHYSICS LETTERS, 1996, 68 (18) : 2486 - 2488
  • [49] Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers
    Champagne, A
    Maciejko, R
    Makino, T
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (06) : 749 - 751
  • [50] REDUCTION OF LINEWIDTH ENHANCEMENT FACTOR IN INGAASP-INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS
    KANO, F
    YAMANAKA, T
    YAMAMOTO, N
    YOSHIKUNI, Y
    MAWATARI, H
    TOHMORI, Y
    YAMAMOTO, M
    YOKOYAMA, K
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1553 - 1559