Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

被引:29
|
作者
Hamp, MJ [1 ]
Cassidy, DT
Robinson, BJ
Zhao, QC
Thompson, DA
Davies, M
机构
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
charge carrier processes; quantum-well lasers; semiconductor lasers;
D O I
10.1109/68.720267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side, The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers.
引用
收藏
页码:1380 / 1382
页数:3
相关论文
共 50 条
  • [21] SEPARATE-CONFINEMENT HETEROSTRUCTURE DEPENDENCE OF THE EFFECTIVE CARRIER RECOMBINATION COEFFICIENT OF STRAINED INGAAS/INGAASP MULTIPLE-QUANTUM-WELL LASERS
    ODAGAWA, T
    NAKAJIMA, K
    TANAKA, K
    NOBUHARA, H
    INOUE, T
    OKAZAKI, N
    WAKAO, K
    APPLIED PHYSICS LETTERS, 1993, 63 (22) : 2996 - 2998
  • [22] Structural and carrier density dependence of carrier lifetime in InGaAs/GaAs multiple-quantum-well lasers
    Czotscher, K
    Weisser, S
    Larkins, EC
    Fleissner, J
    Ralston, JD
    Schonfelder, A
    Rosenzweig, J
    Esquivias, I
    APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3158 - 3160
  • [23] Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure
    Güçlü, AD
    Rejeb, C
    Maciejko, R
    Morris, D
    Champagne, A
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) : 3391 - 3397
  • [24] OPTICAL ANALYSIS OF MULTIPLE-QUANTUM-WELL LASERS
    STREIFER, W
    SCIFRES, DR
    BURNHAM, RD
    APPLIED OPTICS, 1979, 18 (21): : 3547 - 3548
  • [25] Direct measurement of lateral carrier leakage in 1.3-μm InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers
    Belenky, G
    Shterengas, L
    Reynolds, CL
    Focht, MW
    Hybertsen, MS
    Witzigmann, B
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) : 1276 - 1281
  • [26] Evidence of nonuniform carrier distribution in multiple quantum well lasers
    Yamazaki, H
    Tomita, A
    Yamaguchi, M
    Sasaki, Y
    APPLIED PHYSICS LETTERS, 1997, 71 (06) : 767 - 769
  • [27] TRANSIENT CARRIER DYNAMICS AND PHOTON-ASSISTED TRANSPORT IN MULTIPLE-QUANTUM-WELL LASERS
    TESSLER, N
    EISENSTEIN, G
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (03) : 291 - 293
  • [28] Investigations of interdiffusion in InGaAsP multiple-quantum-well structures by photoreflectance
    Lin, D. Y.
    Lin, W. C.
    Wu, F. L.
    Wu, J. S.
    Pan, Y. T.
    Lee, S. L.
    Huang, Y. S.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (05): : 791 - 795
  • [29] LINEWIDTH ENHANCEMENT FACTOR IN INGAASP/INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS
    KANO, F
    YAMANAKA, T
    YAMAMOTO, N
    MAWATARI, H
    TOHMORI, Y
    YOSHIKUNI, Y
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 533 - 537
  • [30] Critical design parameters for engineering broadly tunable asymmetric multiple-quantum-well lasers
    Hamp, MJ
    Cassidy, DT
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2000, 36 (08) : 978 - 983