Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers

被引:29
|
作者
Hamp, MJ [1 ]
Cassidy, DT
Robinson, BJ
Zhao, QC
Thompson, DA
Davies, M
机构
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
charge carrier processes; quantum-well lasers; semiconductor lasers;
D O I
10.1109/68.720267
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Four asymmetric multiple-quantum-well (AMQW) laser structures have been grown and tested. The structures demonstrate that carriers are not evenly distributed across the active region of a MQW laser. Wells at the p-side of the active region are preferentially pumped indicating there are more carriers at the p-side of the active region than at the n-side, The structures also demonstrate that decreasing the height of the barriers reduces this effect and results in a more even carrier distribution. Thus, well position and barrier height are shown to be important design parameters for AMQW and conventional MQW lasers.
引用
收藏
页码:1380 / 1382
页数:3
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