The deterministic field-free magnetization switching of perpendicular ferrimagnetic Tb-Co alloy film induced by interfacial spin current

被引：9

作者：

Guo, Yonghai ^{[1
]}

Wu, Yunzhuo ^{[1
]}

Cao, Yang ^{[1
]}

Zeng, Xiaoxue ^{[1
]}

Wang, Bo ^{[1
]}

Yang, Dezheng ^{[1
]}

Fan, Xiaolong ^{[1
]}

Cao, Jiangwei ^{[1
]}

机构：

[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2021年 / 119卷 / 03期

基金：

中国国家自然科学基金;

关键词：

ORBIT TORQUE; ABSENCE;

D O I：

10.1063/5.0052850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-induced magnetization switching in compensated ferrimagnetic materials by the spin-orbit torque (SOT) effect is promising for the next generation information storage devices. In this work, we report the current-induced deterministic field-free magnetization switching of the perpendicular Tb-Co ferrimagnet layer in a Co/Ti/Tb-Co trilayers. We found that the switching proportion and polarity of the Tb-Co ferrimagnet depend on the magnetization direction of the in-plane Co layer. The switching process revealed by magneto-optical Kerr microscope imaging further confirmed the current-induced field-free switching of the Tb-Co layer. We also demonstrated the large SOT effective field and the perpendicular effective field acting on the Tb-Co layer, by utilizing the second harmonic voltage measurement and the current-induced loop shift method. The large interfacial SOT efficiency and deterministic field-free magnetization switching in the trilayers structure may accelerate the application of ferrimagnet in SOT memory devices. Published under an exclusive license by AIP Publishing.

引用

页数：6

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