Raman spectra of semiconductor nanoparticles: Disorder-activated phonons

被引：108

作者：

Ingale, A ^{[1
]}

Rustagi, KC ^{[1
]}

机构：

[1] Ctr Adv Technol, Indore 452013, India

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.58.7197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present Raman spectra of four semiconductor doped glasses and a single crystal of CdS0.55Se0.45 in the range 30-800 cm(-1) in the backscattering geometry. This includes the first-order Raman scattering from the disorder-activated zone-edge phonons and the LO phonons. TO phonon modes are not observed, as in bulk CdS, for the excitation well above the lowest gap. We show that the asymmetric line profile of the LO phonon structure can be understood as a composite of two phonon modes: the zone center and the zone edge phonons. Disorder-activated modes in the (30-130)-cm(-1) range and the higher-order Raman spectra are also observed and found to be consistent with this assignment.

引用

页码：7197 / 7204

页数：8

共 32 条

[1] NEUTRON-SCATTERING INVESTIGATION OF THE STRUCTURE OF SEMICONDUCTOR-DOPED GLASSES [J].