On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature

被引：4

作者：

Lindstam, M

Boman, M

Piglmayer, K ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Expt Phys, Dept Appl Phys, A-4040 Linz, Austria

[2] Uppsala Univ, Angstrom Lab, Dept Inorgan Chem, SE-75121 Uppsala, Sweden

来源：

APPLIED SURFACE SCIENCE | 2001年 / 172卷 / 3-4期

关键词：

amorphous hydrogenated carbon; laser CVD; photolysis; modeling;

D O I：

10.1016/S0169-4332(00)00853-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogenated amorphous carbon films have been deposited on tungsten and quartz substrates at room temperature by photolytic dissociation of CH2I2. An Ar+ cw laser operating at 350 nm was used as the excitation source. The laser beam was focused parallel to the substrate surface. The deposition process was investigated as a function of laser power and total pressure. The carbon films were analysed by micro-Raman spectroscopy, IR spectroscopy, atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The growth mechanism is discussed from results and analysis. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：200 / 206

页数：7

共 19 条

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