Controlled thermal expansion and thermoelectric properties of Mg2Si/Si composites

被引:2
|
作者
Fu, Jiahui [1 ]
Tanusilp, Sora-at [2 ]
Kumagai, Masaya [2 ,3 ]
Ohishi, Yuji [1 ]
Kurosaki, Ken [2 ,4 ]
机构
[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
[2] Kyoto Univ, Inst Integrated Radiat & Nucl Sci, 2 Asashiro Nishi, Kumatori, Osaka 5900494, Japan
[3] SAKURA Internet Inc, SAKURA Internet Res Ctr, Kita Ku, Grand Front Osaka Tower 35F,4-20 Ofukacho, Osaka 5300011, Japan
[4] Univ Fukui, Res Inst Nucl Engn, 1-2-4 Kanawa Cho, Tsuruga, Fukui 9140055, Japan
基金
日本科学技术振兴机构;
关键词
PERFORMANCE; EFFICIENCY; SILICON;
D O I
10.1063/5.0057137
中图分类号
O59 [应用物理学];
学科分类号
摘要
A thermoelectric module is composed of n- and p-type materials, and its performance is evaluated by the materials' dimensionless figure of merit, zT, which is expected to be as high as possible. Moreover, because a thermoelectric module is designed to operate in various temperature ranges, the rate of each material's deformation in response to a change in temperature, also called thermal expansion, should be considered. If n- and p-type materials in a thermoelectric module have a too large difference in the thermal expansion, it could lead to risks of several device failures and reduction in performance over time. Thus, to achieve practical use, not only zT but also the compatibility of n- and p-type materials are also crucial parameters. In this study, we demonstrated a technique used to minimize the difference of thermal expansion rate between n-type Mg2Si and p-type higher manganese silicide, which are the promising materials used for a practical thermoelectric module. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:7
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