Atomistic view of the recombinative desorption of H2 from H/Si(100) -: art. no. 196103

被引:9
作者
Ferng, SS
Lin, CT
Yang, KM
Lin, DS
Chiang, TC
机构
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevLett.94.196103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Scanning tunneling microscopy is employed to investigate the recombinative desorption of H-2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1x1), (3x1), and (2x1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3x1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.
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页数:4
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