Improvement on performances of graphene-PbSe Schottky photodetector via oxygen-sensitization of PbSe

被引：22

作者：

Ren, Y. X. ^{[1
,2
]}

Dai, T. J. ^{[1
,2
]}

He, B. ^{[1
,2
]}

Liu, X. Z. ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Sichuan, Peoples R China

来源：

MATERIALS LETTERS | 2019年 / 236卷

基金：

美国国家科学基金会;

关键词：

Graphene; PbSe; Oxygen-sensitization; Schottky photodiode; CHARGE-TRANSPORT; LEAD SELENIDE; PHOTOTRANSISTORS;

D O I：

10.1016/j.matlet.2018.10.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene-PbSe Schottky photodiodes were constructed by transferring a monolayer graphene sheet onto the surface of PbSe thin films. In order to improve the device performances, oxygen sensitization of PbSe was adopted in the fabrication process. Responsivity and detectivity of the device fabricated with pristine PbSe were 6.2 mA/W and 2.4 x 10(11) cm Hz(1/2)/W under zero bias. Responsivity and detectivity of the device fabricated with sensitized PbSe were 67 mA/W and 6.8 x 10(12) cm Hz(1/2)/W under zero bias. Significant increase in both responsivity and detectivity confirmed the great impact on device performances introduced by the oxygen-sensitization of PbSe. With a response time of millisecond level, outstanding photoresponse along with fast response speed were achieved in as-fabricated graphene-PbSe Schottky photodiode. (C) 2018 Published by Elsevier B.V.

引用

页码：194 / 196

页数：3

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