Improvement on performances of graphene-PbSe Schottky photodetector via oxygen-sensitization of PbSe

被引：22
作者：
Ren, Y. X. [1 ,2 ]
Dai, T. J. [1 ,2 ]
He, B. [1 ,2 ]
Liu, X. Z. [1 ,2 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Sichuan, Peoples R China
来源：
MATERIALS LETTERS | 2019年 / 236卷
基金：
美国国家科学基金会;
关键词：
Graphene; PbSe; Oxygen-sensitization; Schottky photodiode; CHARGE-TRANSPORT; LEAD SELENIDE; PHOTOTRANSISTORS;
D O I：
10.1016/j.matlet.2018.10.045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Graphene-PbSe Schottky photodiodes were constructed by transferring a monolayer graphene sheet onto the surface of PbSe thin films. In order to improve the device performances, oxygen sensitization of PbSe was adopted in the fabrication process. Responsivity and detectivity of the device fabricated with pristine PbSe were 6.2 mA/W and 2.4 x 10(11) cm Hz(1/2)/W under zero bias. Responsivity and detectivity of the device fabricated with sensitized PbSe were 67 mA/W and 6.8 x 10(12) cm Hz(1/2)/W under zero bias. Significant increase in both responsivity and detectivity confirmed the great impact on device performances introduced by the oxygen-sensitization of PbSe. With a response time of millisecond level, outstanding photoresponse along with fast response speed were achieved in as-fabricated graphene-PbSe Schottky photodiode. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码：194 / 196
页数：3
相关论文
共 24 条
[1]   Record Charge Carrier Diffusion Length in Colloidal Quantum Dot Solids via Mutual Dot-To-Dot Surface Passivation [J].
Carey, Graham H. ;
Levina, Larissa ;
Comin, Riccardo ;
Voznyy, Oleksandr ;
Sargent, Edward H. .
ADVANCED MATERIALS, 2015, 27 (21) :3325-3330
[2]   High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared [J].
Choi, Woong ;
Cho, Mi Yeon ;
Konar, Aniruddha ;
Lee, Jong Hak ;
Cha, Gi-Beom ;
Hong, Soon Cheol ;
Kim, Sangsig ;
Kim, Jeongyong ;
Jena, Debdeep ;
Joo, Jinsoo ;
Kim, Sunkook .
ADVANCED MATERIALS, 2012, 24 (43) :5832-5836
[3]   PHOTOCONDUCTIVITY OF LEAD SELENIDE - THEORY OF THE MECHANISM OF SENSITIZATION [J].
HUMPHREY, JN ;
PETRITZ, RL .
PHYSICAL REVIEW, 1957, 105 (06) :1736-1740
[4]   Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals [J].
Jasieniak, Jacek ;
Califano, Marco ;
Watkins, Scott E. .
ACS NANO, 2011, 5 (07) :5888-5902
[5]   Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].
Li, Xuesong ;
Cai, Weiwei ;
An, Jinho ;
Kim, Seyoung ;
Nah, Junghyo ;
Yang, Dongxing ;
Piner, Richard ;
Velamakanni, Aruna ;
Jung, Inhwa ;
Tutuc, Emanuel ;
Banerjee, Sanjay K. ;
Colombo, Luigi ;
Ruoff, Rodney S. .
SCIENCE, 2009, 324 (5932) :1312-1314
[6]   Dependence of Carrier Mobility on Nanocrystal Size and Ligand Length in PbSe Nanocrystal Solids [J].
Liu, Yao ;
Gibbs, Markelle ;
Puthussery, James ;
Gaik, Steven ;
Ihly, Rachelle ;
Hillhouse, Hugh W. ;
Law, Matt .
NANO LETTERS, 2010, 10 (05) :1960-1969
[7]   A graphene/single GaAs nanowire Schottky junction photovoltaic device [J].
Luo, Yanbin ;
Yan, Xin ;
Zhang, Jinnan ;
Li, Bang ;
Wu, Yao ;
Lu, Qichao ;
Jin, Chenxiaoshuai ;
Zhang, Xia ;
Ren, Xiaomin .
NANOSCALE, 2018, 10 (19) :9212-9217
[8]   High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors [J].
Lv, Peng ;
Zhang, Xiujuan ;
Zhang, Xiwei ;
Deng, Wei ;
Jie, Jiansheng .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (10) :1337-1339
[9]   Growth mechanism of cuboid growth pits in lead selenide epilayers grown by molecular beam epitaxy [J].
Ma, J. G. ;
Curtis, M. E. ;
Zurbuchen, M. A. ;
Keay, J. C. ;
Weng, B. B. ;
Li, D. H. ;
Zhao, F. H. ;
Johnson, M. B. ;
Shi, Z. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (45)
[10]   Contact resistivity and current flow path at metal/graphene contact [J].
Nagashio, K. ;
Nishimura, T. ;
Kita, K. ;
Toriumi, A. .
APPLIED PHYSICS LETTERS, 2010, 97 (14)
123