High-power InGaAs-on-Si pin RF photodiodes

被引：4

作者：

Tulchinsky, DA

Williams, KJ

Pauchard, A

Bitter, M

Pan, Z

Hodge, L

Hummel, SG

Lo, YH

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Nova Crystals Inc, San Jose, CA 95126 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 14期

关键词：

D O I：

10.1049/el:20030693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power InGaAs-on-Si RF pin photodetectors are demonstrated. These diodes dissipate upwards of 640 mW of electrical power, have small-signal compression currents of 91.4 mA at 200 MHz and 71.5 mA at 300 MHz, and dark currents are measured to be less than 10 nA.

引用

页码：1084 / 1086

页数：3

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