High-power InGaAs-on-Si pin RF photodiodes

被引：4
|
作者：
Tulchinsky, DA
Williams, KJ
Pauchard, A
Bitter, M
Pan, Z
Hodge, L
Hummel, SG
Lo, YH
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Nova Crystals Inc, San Jose, CA 95126 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 14期
关键词：
D O I：
10.1049/el:20030693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power InGaAs-on-Si RF pin photodetectors are demonstrated. These diodes dissipate upwards of 640 mW of electrical power, have small-signal compression currents of 91.4 mA at 200 MHz and 71.5 mA at 300 MHz, and dark currents are measured to be less than 10 nA.
引用
收藏
页码：1084 / 1086
页数：3
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