High-power InGaAs-on-Si pin RF photodiodes

被引：4
|
作者：
Tulchinsky, DA
Williams, KJ
Pauchard, A
Bitter, M
Pan, Z
Hodge, L
Hummel, SG
Lo, YH
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Nova Crystals Inc, San Jose, CA 95126 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 14期
关键词：
D O I：
10.1049/el:20030693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power InGaAs-on-Si RF pin photodetectors are demonstrated. These diodes dissipate upwards of 640 mW of electrical power, have small-signal compression currents of 91.4 mA at 200 MHz and 71.5 mA at 300 MHz, and dark currents are measured to be less than 10 nA.
引用
收藏
页码：1084 / 1086
页数：3
相关论文
共 50 条
  • [1] High-power RF photodiodes and their applications
    Nagatsuma, Tadao
    Ito, Hiroshi
    Ishibashi, Tadao
    LASER & PHOTONICS REVIEWS, 2009, 3 (1-2) : 123 - 137
  • [2] Characterization and optimization of high-power InGaAs/InP photodiodes
    Huapu Pan
    Andreas Beling
    Hao Chen
    Joe C. Campbell
    Optical and Quantum Electronics, 2008, 40 : 41 - 46
  • [3] Characterization and optimization of high-power InGaAs/InP photodiodes
    Pan, Huapu
    Beling, Andreas
    Chen, Hao
    Campbell, Joe C.
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (01) : 41 - 46
  • [4] Infrared-sensitive InGaAs-on-Si p-i-n photodetectors exhibiting high-power linearity
    Pauchard, A
    Bitter, M
    Pan, Z
    Kristjansson, S
    Hodge, LA
    Williams, KJ
    Tulchinsky, DA
    Hummel, SG
    Lo, YH
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) : 2544 - 2546
  • [5] High-Power, High-Linearity Photodiodes for RF Photonics
    Campbell, J. C.
    Beling, A.
    Piels, Molly
    Fu, Yang
    Cross, Allen
    Zhou, Qiugui
    Peters, Jon
    Bowers, John E.
    Li, Zhi
    2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012), 2012, : 215 - +
  • [6] High-Power V-Band InGaAs/InP Photodiodes
    Zhou, Qiugui
    Cross, Allen S.
    Beling, Andreas
    Fu, Yang
    Lu, Zhiwen
    Campbell, Joe C.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (10) : 907 - 909
  • [7] Thermal analysis of high-power InGaAs-InP photodiodes
    Duan, Ning
    Wang, Xin
    Li, Ning
    Liu, Han-Din
    Campbell, Joe C.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (11-12) : 1255 - 1258
  • [8] InGaAs-on-Si photodetectors for high-sensitivity detection
    Bitter, M
    Pan, Z
    Kristjansson, S
    Boman, L
    Gold, R
    Pauchard, A
    INFRARED TECHNOLOGY AND APPLICATIONS XXX, 2004, 5406 : 1 - 12
  • [9] High-power photodiodes
    Williams, Keith J.
    Tulchinsky, David A.
    Campbell, Joe C.
    2007 INTERNATIONAL TOPICAL MEETING ON MICROWAVE PHOTONICS, 2007, : 9 - +
  • [10] Decreasing a recovery time of sensitivity for the InGaAs/InP pin-photodiodes after an exposure to the high-power pulsed background illumination
    Andreev, D.S.
    Varganova, V.S.
    Khakuashev, P.E.
    Chinareva, I.V.
    Dirochka, A.I.
    Applied Physics, 2015, 2015-January (06): : 70 - 73
12345