Low-leakage In0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic InxGa1-xP buffer

被引：0
|
作者：
Lin, CK [1 ]
Kuo, HC [1 ]
Liao, YS [1 ]
Lin, GR [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30050, Taiwan
来源：
SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES | 2005年 / 5624卷
关键词：
metamorphic; InGaAs; heterostructure; p-i-n photodiode; GaAs;
D O I：
10.1117/12.577048
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel top-illuminated metamorphic In(0.53)Ga(0.47)As p-i-n photodiodes (MM-PlNPD) grown on GaAs substrate by using a linearly graded In(x)Ga(1-x)P (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10(-11) W/Hz(1/2), and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.
引用
收藏
页码：399 / 406
页数：8
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