Comments on the high temperature oxidation characteristics of Ti3SiC2 in air

被引：0

作者：

Nguyen, Thuan Dinh ^{[1
]}

Choi, Jung-Ho ^{[1
]}

Park, Sang-Whan ^{[2
]}

Lee, Dong-Bok ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[2] KIST, Multifunct Ceram Res Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2007年 / 8卷 / 06期

关键词：

Ti3SiC2; titanium; silicon; carbon; oxidation; BEHAVIOR; COMPOSITES; RESISTANCE; STABILITY; SI;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The high temperature oxidation characteristics of Ti3SiC2 have been studied extensively before. However, we believe that there are still the ambiguous points concerning the scale structure and oxidation mechanism of Ti3SiC2. Hence, the oxide scales formed, the distribution and roles of Ti, Si and C in the scale, and the oxidation mechanism are discussed based on the results obtain from this and previous studies. In this study, Ti3SiC2 compounds were produced via a powder metallurgical process, oxidized between 900 and 1200 degrees C in air for up to 100 h, and the oxidation characteristics are discussed.

引用

页码：397 / 401

页数：5

共 20 条

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