Correlation between X-ray micro-diffraction and a developed analytical model to measure the residual stresses in suspended structures in MEMS

被引：4

作者：

Rigo, S

Goudeau, P

Desmarres, JM

Masri, T

Petit, JA

Schmitt, P

机构：

[1] CNES, French Space Agcy, F-31401 Toulouse 9, France

[2] Univ Poitiers, F-86960 Futuroscope, France

[3] Ecole Natl Ingn Tarbes, F-65016 Tarbes, France

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(03)00331-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The MEMS manufacturing processes brought into play material stackings as different as metals, insulators (oxides) and semi conductors. These devices are generally the center point of high residual stresses which can entail damages to devices during development or in field applications. The evaluation of these stresses is thus an essential stage in the search for solutions to improve mechanical toughness and performance of these MEMS. In this paper, we set down an analytical model to determine the gradient of stress present in the layers of suspended structures and the related validation by X-ray micro-diffraction. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1963 / 1968

页数：6

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