Current spreading of III-nitride light-emitting diodes using plasma treatment

被引：36
作者：
Lee, Hsin-Ying
Pan, Ke-Hao
Lin, Chih-Chien
Chang, Yun-Chorng
Kao, Fu-Jen
Lee, Ching-Ting
机构：
[1] Natl Cheng Kung Univ, Inst Electro Optical Sci & Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelectron, Dept Elect Engn, Tainan, Taiwan
[3] Natl Yang Ming Univ, Inst Biophoton Engn, Taipei 112, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 04期
关键词：
D O I：
10.1116/1.2753853
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, (CF4+O-2) plasma is used to selectively treat the p-type GaN region underneath the bonding pad of the anode electrode of Ill-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16%,enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the Ill-nitride LEDs. (c) 2007 American Vacuum Society.
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收藏
页码：1280 / 1283
页数：4
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