Accurate silicon dummy structure model for nonlinear microwave FinFET modeling

被引:13
|
作者
Crupi, Giovanni [1 ]
Schreurs, Dominique M. M. -P. [2 ]
Caddemi, Alina [1 ]
机构
[1] Univ Messina, Dipartimento Fis Materia & Ingn Elettron, I-98166 Messina, Italy
[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
关键词
Dummy structures; Equivalent circuit; FinFET; Modeling; On-wafer microwave measurements; SCATTERING PARAMETER S-22; HETEROJUNCTION BIPOLAR-TRANSISTORS; RF POWER MOSFETS; SMALL-SIGNAL; EQUIVALENT-CIRCUIT; KINK PHENOMENON; PARASITICS; PAD;
D O I
10.1016/j.mejo.2010.05.006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dummy test structures based de-embedding techniques allow one to quickly subtract out part of the parasitic contributions from the microwave transistor measurements without the need of explicit determination of the associated circuit model But this means that the problem of determining the complex network representing the dummy structures is only by-passed rather than solved. Consequently, this paper is aimed at extracting accurate lumped element models for silicon "open" and "short" structures in order to extend the nonlinear microwave modeling of on-wafer FinFETs at the calibration plane corresponding to the probe tips without need of any shift of the reference plane. (C) 2010 Elsevier Ltd. All rights reserved
引用
收藏
页码:574 / 578
页数:5
相关论文
共 50 条
  • [1] Microwave neural modeling for silicon FinFET varactors
    Marinkovic, Zlatica
    Crupi, Giovanni
    Schreurs, Dominique M. M. -P.
    Caddemi, Alina
    Markovic, Vera
    INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2014, 27 (5-6) : 834 - 845
  • [2] A HIGHLY ACCURATE MICROWAVE NONLINEAR MESFET MODEL
    RODRIGUEZTELLEZ, J
    MEZHER, KA
    PORTILLA, OMC
    PATROCINIO, JCL
    MICROWAVE JOURNAL, 1993, 36 (05) : 280 - &
  • [3] Microwave FinFET modeling based on artificial neural networks including lossy silicon substrate
    Marinkovic, Zlatica
    Crupi, Giovanni
    Schreurs, Dominique M. M. -P.
    Caddemi, Alina
    Markovic, Vera
    MICROELECTRONIC ENGINEERING, 2011, 88 (10) : 3158 - 3163
  • [4] AN ACCURATE FET MODEL FOR MICROWAVE NONLINEAR CIRCUIT SIMULATION
    ONOMURA, J
    WATANABE, S
    KAMIHASHI, S
    IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (09) : 1223 - 1228
  • [5] Accurate FET model for microwave nonlinear circuit simulation
    Toshiba Corp, Kawasaki-shi, Japan
    IEICE Trans Electron, 9 (1223-1228):
  • [6] Accurate Modeling and Analysis of Currents in Trapezoidal FinFET Devices
    Rao, R.
    Bansal, A.
    Kim, J.
    Roy, K.
    Chuang, C. T.
    2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 39 - +
  • [7] Accurate RF and microwave system level modeling of wide band nonlinear circuits
    Ngoya, E.
    Le Gallou, N.
    Nebus, J.M.
    Buret, H.
    Reig, P.
    IEEE MTT-S International Microwave Symposium Digest, 2000, 1 : 79 - 82
  • [8] Accurate RF and microwave system level modeling of wide band nonlinear circuits
    Ngoya, E
    Le Gallou, N
    Nébus, JM
    Burêt, H
    Reig, P
    2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 79 - 82
  • [9] Dummy Model based Workload Modeling
    Putze, Felix
    Schultz, Tanja
    Proepper, Robert
    2015 IEEE INTERNATIONAL CONFERENCE ON SYSTEMS, MAN, AND CYBERNETICS (SMC 2015): BIG DATA ANALYTICS FOR HUMAN-CENTRIC SYSTEMS, 2015, : 935 - 940
  • [10] Key characterization factors of accurate power modeling for FinFET circuits
    Ma KaiSheng
    Cui XiaoXin
    Liao Kai
    Liao Nan
    Wu Di
    Yu DunShan
    SCIENCE CHINA-INFORMATION SCIENCES, 2015, 58 (02) : 1 - 13