Influence of Space Charge During the Oxidation of Metal Surfaces

被引:2
作者
Mukhambetov, D. G. [1 ,2 ]
De Los Santos Valladares, L. [3 ,4 ,5 ]
Kargin, J. B.
Kozlovskiy, A. L. [1 ,6 ]
机构
[1] LN Gumilyov Eurasian Natl Univ, Dept Technol Commercializat, Astana 010000, Kazakhstan
[2] Almaty Acad Econ & Stat, Dept Informat Syst, Alma Ata 050035, Kazakhstan
[3] Univ Cambridge, Cavendish Lab, Dept Phys, JJ Thomson Ave, Cambridge CB3 0HE, England
[4] Northeastern Univ, Sch Mat Sci & Engn, 11,Lane 3,Wenhua Rd, Shenyang 110819, Liaoning, Peoples R China
[5] Univ Nacl Mayor San Marcos, Fac Ciencias Fis, Lab Ceramicos & Nanomat, Ap Postal 14-0149, Lima, Peru
[6] Inst Nucl Phys, Lab Solid State Phys, Alma Ata 050032, Kazakhstan
来源
OXIDATION OF METALS | 2018年 / 90卷 / 3-4期
关键词
Surface oxidation; Cabrera and Mott theory; Oxide film growth; Space charge influence; Metal surfaces; OXIDE FILM GROWTH; PHOTOELECTRON-SPECTROSCOPY; KINETICS; THIN; TEMPERATURE; DIFFUSION;
D O I
10.1007/s11085-018-9843-8
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
In this work we present a model for the surface oxide film growth considering the influence of space charge. The space charge field E-sp is assumed proportional to the charge of moving metal ions and electrons in the oxide layer. The surface charge field E-ox decreases as the Cabrera and Motts' oxide thickness X grows to its limit X-1 (E-ox=V-M/X). E-ox remains constant for further growth of the oxide film (E-ox=V-M/X-1). The obtained equation for the growing rate of the oxide film covers two stages. The first stage is characterized by a negligible space charge and is described by the typical inverse logarithmic law. During transition from thin to thick film, the oxidation growth rate is described by a direct logarithmic law which is confirmed by many experiments. At the end of this stage, the drift of metal ions is replaced by their diffusion that leads to parabolic law.
引用
收藏
页码:515 / 526
页数:12
相关论文
共 30 条
[1]   TRANSPORT PROCESSES DURING THE GROWTH OF OXIDE-FILMS AT ELEVATED-TEMPERATURE [J].
ATKINSON, A .
REVIEWS OF MODERN PHYSICS, 1985, 57 (02) :437-470
[2]  
Bokstein BS, 1978, DIFFUSION METALS
[3]  
Caberra N., 1948, REPORTS PROGR PHYS, V12, P163, DOI DOI 10.1088/0034-4885/12/1/308
[4]   Temperature and pressure dependent Mott potentials and their influence on self-limiting oxide film growth [J].
Cai, Na ;
Zhou, Guangwen ;
Mueller, Kathrin ;
Starr, David E. .
APPLIED PHYSICS LETTERS, 2012, 101 (17)
[5]   Effect of oxygen gas pressure on the kinetics of alumina film growth during the oxidation of Al(111) at room temperature [J].
Cai, Na ;
Zhou, Guangwen ;
Mueller, Kathrin ;
Starr, David E. .
PHYSICAL REVIEW B, 2011, 84 (12)
[6]   Thermal oxidation of tantalum films at various oxidation states from 300 to 700 °C -: art. no. 114908 [J].
Chandrasekharan, R ;
Park, I ;
Masel, RI ;
Shannon, MA .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
[7]   Towards a Unified Macroscopic Description of Exciton Diffusion in Organic Semiconductors [J].
Chen, Jingrun ;
Lin, Jason D. A. ;
Thuc-Quyen Nguyen .
COMMUNICATIONS IN COMPUTATIONAL PHYSICS, 2016, 20 (03) :754-772
[8]   Diffuse-Interface Modeling and Multiscale-Relay Simulation of Metal Oxidation Kinetics-With Revisit on Wagner's Theory [J].
Cheng, Tian-Le ;
Wen, You-Hai ;
Hawk, Jeffrey A. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (02) :1269-1284
[9]  
Fehlner FP, 2012, CORROSION MECH THEOR
[10]  
Fromhold A.J. T., 1980, THEORY METAL OXIDATI, V2