Moire-Trapped Interlayer Trions in a Charge-Tunable WSe2/MoSe2 Heterobilayer

被引:65
作者
Brotons-Gisbert, Mauro [1 ]
Baek, Hyeonjun [1 ]
Campbell, Aidan [1 ]
Watanabe, Kenji [2 ]
Taniguchi, Takashi [3 ]
Gerardot, Brian D. [1 ]
机构
[1] Heriot Watt Univ, Inst Photon & Quantum Sci, SUPA, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Natl Inst Mat Sci, Res Ctr Funct Mat, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan
基金
英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
ELECTRICAL CONTROL; EXCITONS;
D O I
10.1103/PhysRevX.11.031033
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Transition-metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moire patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with C-3 symmetry. However, the narrow emission linewidths of the quantum emitters contrast with a broad ensemble IX emission observed in nominally identical heterobilayers, opening a debate regarding the origin of IX emission. Here we report the continuous evolution from a few trapped IXs to an ensemble of IXs with both triplet- and singlet-spin configurations in a gate-tunable 2H-MoSe2/WSe2 heterobilayer. We observe signatures of dipolar interactions in the IX ensemble regime which, when combined with magneto-optical spectroscopy, reveal that the narrow quantum-dot-like and broad ensemble emission originate from IXs trapped in moire potentials with the same atomic registry. Finally, electron doping leads to the formation of three different species of localized negative trions with contrasting spin-valley configurations, among which we observe both intervalley and intravalley IX trions with spin-triplet optical transitions. Our results identify the origin of IX emission in MoSe2/WSe2 heterobilayers and highlight the important role of exciton-exciton interactions and Fermi-level control in these highly tunable quantum materials.
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页数:12
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