Hot-electron noise and energy relaxation in wurtzite ZnO

被引：0
作者：
Sermuksnis, Emilis [1 ]
Liberis, Juozapas [1 ]
Matulionis, Arvydas [1 ]
Toporkov, Mykyta [2 ]
Avrutin, Vitaliy [2 ]
Ozgur, Umit [2 ]
Morkoc, Hadis [2 ]
机构：
[1] Ctr Phys Sci & Technol, Fluctuat Res Lab, LT-02300 Vilnius, Lithuania
[2] Virginia Commonwealth Univ, Richmond, VA 23284 USA
来源：
2015 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2015年
关键词：
PHONON LIFETIME; TIME; GAN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-electron noise measurements at a 38.5 GHz frequency were used for extraction of hot-electron energy relaxation time in a ZnO/Mg0.38Zn0.62O/ZnO channel with a two-dimensional electron gas (2DEG). The relaxation time of similar to 55 fs was obtained at a 2DEG density of similar to 5.5 x 10(12) cm(-2). The ultrafast relaxation took place in the vicinity of LO-phonon-plasmon resonance. The results suggest that the power dissipation is enhanced by plasmons. The results are in good agreement with those reported for GaN and InGaAs 2DEG channels and doped ZnO films.
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页数：4
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