Structure and properties of Ti-Si-N films prepared by ICP assisted magnetron sputtering

被引:42
作者
Li, ZG
Mori, M
Miyake, S
Kumagai, M
Saito, H
Muramatsu, Y
机构
[1] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan
[2] Kanagawa Ind Technol Res Inst, Kanagawa 2500055, Japan
[3] Kanagawa High Technol Fdn, Kawasaki, Kanagawa 2130012, Japan
关键词
sputtering; inductively coupled plasma; nanocomposite film; hardness;
D O I
10.1016/j.surfcoat.2004.08.148
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Inductively coupled plasmas (ICPs) were generated to assist magnetron sputtering. By bombarding the growing film with a high-density (similar to 2.0 mA/cm(2)) low-energy (similar to 22 eV) ion flux, Ti-Si-N films containing 0-12 at.% Si were deposited on Si(100) substrates at low deposition temperature (< 150 degrees C). The residual compressive stresses of these films were measured to be lower than 1.5 GPa. Film hardness was significantly enhanced by the addition of a small amount of Si and attained a maximum value of 48 GPa at approximately 5.8 at.% Si. From X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results, the superhard Ti-Si-N films were characterized as having a nanocomposite structure, consisting of nanocolumns of TiN crystallites with amorphous Si3N4 inside the column boundaries. The hardest TiSi-N film exhibited a pronounced TiN(200) texture. No refinement of crystallite size by the addition of Si was observed in the present series of Ti-Si-N films. Thus, the hardness enhancement was attributed to nanocomposite effect. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:345 / 349
页数:5
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