Passivation Properties of Atomic-Layer-Deposited Hafnium and Aluminum Oxides on Si Surfaces

被引：68

作者：

Wang, Jun ^{[1
]}

Mottaghian, Seyyed Sadegh ^{[1
]}

Baroughi, Mahdi Farrokh ^{[1
]}

机构：

[1] S Dakota State Univ, Dept Elect Engn & Comp Sci, Brookings, SD 57007 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 02期

基金：

美国国家科学基金会;

关键词：

Atomic layer deposited (ALD); fixed charge density; interface trap density; surface passivation; SILICON SOLAR-CELLS; AL2O3; FILMS; RECOMBINATION; TEMPERATURE; PARAMETERS; EFFICIENCY; IMPACT;

D O I：

10.1109/TED.2011.2176943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide (HfO2) and aluminum oxide (Al2O3) layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal-oxide-semiconductor model and results from capacitance-voltage measurements, the density of fixed charges (N-f) and the density of interface traps (D-it) at the HfO2/Si and Al2O3/Si interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.

引用

页码：342 / 348

页数：7

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