Positive temperature coefficient of resistivity effect in niobium-doped barium titanate ceramics obtained at low sintering temperature

被引:19
作者
Wang, XX [1 ]
Chan, HLW
Choy, CL
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China
关键词
BaTiO3; electrical properties; grain boundary; sintering; thermistor;
D O I
10.1016/S0955-2219(03)00379-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A positive temperature coefficient of resistivity (PTCR) effect was observed for low temperature sintered Nb-doped BaTiO3 ceramics using YB6 as a sintering aid. A semiconducting BaTiO3 with good PTCR property was obtained at a low sintering temperature of 1150 degreesC because of the addition of YB6. Addition of 0.2 mol% Nb2O5 and 1 mol% of YB6 led to a low room-temperature resistivity and a resistivity jump of about 10(4). Room-temperature resistivity of the ceramics was controlled by the grain boundary resistivity which was related to the added amount of YB6 and the sintering temperature. YB6 only worked as a sintering aid to enhance the densification of semiconducting BaTiO3 ceramics at low sintering temperature. (C) 2003 Elsevier Ltd. All rights reserved.
引用
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页码:1227 / 1231
页数:5
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