Electric field enhancement caused by porosity in ultra-low-k dielectrics

被引：3

作者：

Hong, CS ^{[1
]}

Milor, L ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

ISSM 2005: IEEE International Symposium on Semiconductor Manufacturing, Conference Proceedings | 2005年

关键词：

D O I：

10.1109/ISSM.2005.1513398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is demonstrated that the electric field distribution can be distinguishably enhanced by the presence of free volumes or pores in dielectrics. It is shown that the intensity of the electric field is dependent on the permittivity, shape and interconnectivity of the pores. This leads to the conclusion that inclusion of porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism.

引用

页码：434 / 437

页数：4

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