A New High Efficiency Current Source Driver With Bipolar Gate Voltage

被引：38

作者：

Fu, Jizhen ^{[1
]}

Zhang, Zhiliang ^{[2
]}

Liu, Yan-Fei ^{[3
]}

Sen, Paresh C. ^{[3
]}

Ge, Lusheng ^{[4
]}

机构：

[1] Int Rectifier, El Segundo, CA 90245 USA

[2] Nanjing Univ Aeronaut & Astronaut, Aeropower Sci Tech Ctr, Coll Automat Engn, Nanjing 210016, Peoples R China

[3] Queens Univ, Dept Elect & Comp Engn, Kingston, ON K7L 3N6, Canada

[4] Anhui Univ, Sch Elect Engn & Informat, Hefei 243002, Anhui, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2012年 / 27卷 / 02期

关键词：

Buck converter; common source inductance; current diversion problem; current source driver (CSD); resonant gate driver (RGD); voltage regulators (VRs); voltage source driver (VSD); BUCK CONVERTER; VRM; IMPROVEMENT; INDUCTANCE; REGULATOR; CIRCUIT; DESIGN; NUMBER;

D O I：

10.1109/TPEL.2010.2077741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel bipolar current source driver (CSD) for power MOSFETs is proposed in this paper. The proposed bipolar CSD alleviates the gate current diversion problem of the existing CSDs by clamping the gate voltage to a flexible negative value (such as -3.5 V) during turn-off transition. Therefore, the proposed driver is able to turn off the MOSFET much faster with a higher effective gate current. The idea presented in this paper can also be extended to other CSDs to further improve the efficiency with high output currents. The experimental results verify the benefits of the proposed CSD. For buck converters with 12 V input at 1 MHz switching frequency, the proposed driver improves the efficiency from 80.5% using the existing CSD to 82.5% (an improvement of 2%) at 1.2 V/30 A, and at 1.3 V/30 A output, from 82.5% using the existing CSD to 83.9% (an improvement of 1.4%).

引用

页码：985 / 997

页数：13

共 32 条

[1] A resonant MOSFET gate driver with efficient energy recovery [J].