Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility

被引：21

作者：

Shirokura, Takanori ^{[1
]}

Fan, Tuo ^{[1
]}

Nguyen Huynh Duy Khang ^{[1
,2
]}

Kondo, Tsuyoshi ^{[3
]}

Hai, Pham Nam ^{[1
,4
]}

机构：

[1] Tokyo Inst Technol, Dept Elect, Elect Engn, Meguro Ku, Tokyo 1528550, Japan

[2] Ho Chi Minh City Univ Educ, Dept Phys, Ho Chi Minh City 738242, Vietnam

[3] Kioxia Corp, Inst Memory Technol R&D, Device Technol R&D Ctr, Yokohama, Kanagawa 2350032, Japan

[4] Univ Tokyo, Ctr Spintron Res Network CSRN, Bunkyo Ku, Tokyo 1138656, Japan

来源：

SCIENTIFIC REPORTS | 2022年 / 12卷 / 01期

关键词：

AXIS;

D O I：

10.1038/s41598-022-06325-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (theta(SH) > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant theta(SH) up to 4.1 and a high thermal budget up to 600 degrees C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high theta(SH) and high compatibility with the BEOL process that would be easily adopted by the industry.

引用

页数：10

共 52 条

[1] Topological electronic structure in half-Heusler topological insulators [J].