Growth mechanism of 3C-SiC(111) on Si without carbonization process

We have used rapid thermal chemical vapor deposition (RTCVD) technique to grow epitaxial SiC thin films on Si wafers without carbonization process by pyrolyzing tetramethylsilane (TMS). The growth rate of SiC films increases with TMS flow rate and temperature, but it decreases with temperature at higher TMS flow rates. The XRD spectra oi the films indicate that the growth direction is along the (111) direction of beta-SiC. IR and RBS measurements have been employed to analyze the chemical composition of the films. At 1100 degrees C TMS molecules dissociate almost completely into Si atoms, CH4 and C2H2 gases. The growth mechanism of SiC films on Si substrates without carbonization process has been proposed based on the analyses by TEM and QMS.