Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs

被引：35

作者：

Jiang, Rong ^{[1
]}

Zhang, En Xia ^{[1
]}

McCurdy, Michael W. ^{[1
]}

Wang, Pengfei ^{[1
]}

Gong, Huiqi ^{[1
]}

Yan, Dawei ^{[1
,2
]}

Schrimpf, Ronald D. ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA

[2] Jiangnan Univ, Engn Res Ctr Internet Things Technol Applicat, Minist Educ, Dept Elect Engn, Wuxi 214122, Peoples R China

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2019年 / 66卷 / 01期

关键词：

AlGaN/GaN; enhanced low-dose-rate sensitivity (ELDRS); high-electron mobility transistor (HEMT); total ionizing dose (TID); DEGRADATION; HYDROGEN; DEFECTS; STRESS; SIO2;

D O I：

10.1109/TNS.2018.2873059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant threshold voltage V-th shifts are observed during 10-keV X-ray irradiation of AlGaN/GaN high-electron mobility transistors (HEMTs). Shifts are much smaller for lower dose-rate Cs-137 irradiation than that for higher dose-rate X-ray irradiation. This occurs because hydrogen transport and interactions with defects and impurities in these crystalline wide bandgap semiconductor materials differ fundamentally from those in amorphous SiO2. The electric field is also higher in GaN-based HEMTs than in bipolar base oxides. The absence of enhanced low-dose-rate sensitivity in these devices simplifies testing of GaN-based HEMTs for space applications. No significant X-ray-induced V-th shifts are observed in development stage InAlN/GaN HEMTs.

引用

页码：170 / 176

页数：7

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