Direct patterning of sol-gel metal oxide semiconductor and dielectric films via selective surface wetting

被引：40

作者：

Sung, Sujin ^{[1
]}

Park, Sungjun ^{[1
]}

Cha, Seungbok ^{[1
]}

Lee, Won-June ^{[1
]}

Kim, Chang-Hyun ^{[1
,2
]}

Yoon, Myung-Han ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Res Inst Solar & Sustainable Energies, Gwangju 500712, South Korea

来源：

RSC ADVANCES | 2015年 / 5卷 / 48期

关键词：

FIELD-EFFECT TRANSISTORS; LOW-TEMPERATURE; LOW-VOLTAGE; WETTABILITY;

D O I：

10.1039/c5ra04515k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the simple, photolithography-free, direct patterning of both solution-processed metal oxide semiconductors and dielectrics via selective surface wetting. This technique was directly applied to fabrication of low-voltage all-solution metal oxide thin-film transistors with minimal channel and gate leakage currents.

引用

页码：38125 / 38129

页数：5

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