Copper coplanar waveguides on silicon substrates for operation above 10 GHz

被引：0

作者：

Maya, RE ^{[1
]}

Levenets, V ^{[1
]}

Tarr, NG ^{[1
]}

Plett, C ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003) | 2004年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper presents all experimental study of copper coplanar waveguides fabricated oil silicon substrates suitable for use in bulk CMOS IC fabrication. The waveguides were separated from the substrate by thick layers of polyimide. Waveguide performance is compared to that of aluminum control devices underlayed with silicon dioxide. The lower resistance of the copper and improved substrate isolation obtained with the low-k polyimide dielectric provide a significant performance boost compared to the controls. Distributed parameters for these CPW's are provided for frequencies lip to 15 GHz to support circuit, applications for theses devices.

引用

页码：59 / 63

页数：5

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