SRAM PUF Quality and Reliability Comparison for 28 nm Planar vs. 16 nm FinFET CMOS Processes

被引：0

作者：

Narasimham, Balaji ^{[1
]}

Reed, Dan ^{[1
]}

Gupta, Saket ^{[1
]}

Ogawa, Ennis T. ^{[1
]}

Zhang, Yifei ^{[1
]}

Wang, J. K. ^{[1
]}

机构：

[1] Broadcom Ltd, Irvine, CA 92617 USA

来源：

2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2017年

关键词：

SRAM; PUF; Aging; Planar CMOS; FinFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SRAM physical unclonable function (PUF) provides a low-cost security key to address hardware attacks such as cloning as well as for reliability tracking of ICs in the field. In this work the quality and aging reliability of 28 nm high-K metal gate planar and 16 nm FinFET based SRAMs are discussed in detail with regards to their use in PUF. Data indicates that 16 nm FinFET process has a better SRAM PUF quality without any design modifications compared to the 28 nm planar process. In addition, the aging-induced bit instability is shown to be a reasonably small percentage of the overall bit counts.

引用

页数：4