Ion-beam-induced surface modification and nanostructuring of AIIIBv semiconductors

被引：9
|
作者：
Szymonski, M
Krok, F
Struski, P
Kolodziej, J
Such, B
机构：
[1] Jagiellonian Univ, Marian Smoluchowski Inst Phys, PL-30059 Krakow, Poland
[2] Jagiellonian Univ, Reg Lab Physicochem Anal & Struct Res, PL-30060 Krakow, Poland
来源：
PROGRESS IN SURFACE SCIENCE | 2003年 / 74卷 / 1-8期
关键词：
ion-induced surface modification; ion-enhanced surface diffusion; surface nanostructuring; A(III)B(v) semiconductor surfaces; dynamic force microscopy; Kelvin probe force spectroscopy;
D O I：
10.1016/j.progsurf.2003.08.026
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ion-beam-induced modification of InSb (001) semiconductor surface has been studied by means of atomic force microscopy and Kelvin probe force microscopy. it was found that nonstoichiometric sputtering of the compound surface and beam enhanced surface diffusion led to unusual development of surface structures in the form of dots and wires with nanometer scale dimensions. The shape, the size and the surface density of nanostructures were investigated as a function of the beam flux and fluence, and as a function of the crystal orientation with respect to the ion-beam direction. The mechanisms involved in the surface modification were compared with results of Monte-Carlo computer simulations of anisotropic surface diffusion. (C) 2003 Elsevier Ltd. All rights reserved.
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收藏
页码：331 / 341
页数：11
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