Carbon nanotube field effect transistor-based content addressable memory architectures

被引：12

作者：

Nepal, K. ^{[1
]}

You, K. ^{[2
]}

机构：

[1] Univ St Thomas, Sch Engn, St Paul, MN 55407 USA

[2] Bucknell Univ, Dept Elect Engn, Lewisburg, PA 17837 USA

来源：

MICRO & NANO LETTERS | 2012年 / 7卷 / 01期

关键词：

DESIGN; CELL;

D O I：

10.1049/mnl.2011.0576

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The authors investigate the use of carbon nanotube-based field effect transistors for the design of content addressable memory (CAM). An alternate design of a ternary content addressable memory (3CAM) using three-valued circuit structures is presented and it has been shown that the new design can lead to a 25% savings in area with no loss in search speed.

引用

页码：20 / 23

页数：4

共 15 条

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